inchange semiconductor isc product specification isc silicon pnp darlingtion power transistor MJ2501 description built-in base-emitter shunt resistors high dc current gain- h fe = 1000 (min) @ i c = -5a collector-emitter breakdown voltage- v (br)ceo = -80v(min) complement to type mj3001 applications designed for use as output dev ices in complementary general purpose amplifier applications. absolute maximum ratings(t c =25 ) symbol parameter value unit v cbo collector-base voltage -80 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current -continuous -10 a i b b base current -0.2 a p c collector power dissipation@t c =25 150 w t j junction temperature 200 t stg storage temperature -55~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.17 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlingtion power transistor MJ2501 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = -100ma; i b = 0 -80 v v ce (sat) -1 collector-emitter saturation voltage i c = -5a; i b = -20ma b -2.0 v v ce (sat) -2 collector-emitter saturation voltage i c = -10a; i b = -50ma -4.0 v v be (on) base-emitter on voltage i c = -5a ; v ce = -3v -3.0 v i ceo collector cutoff current v ce = -40v; i b = 0 b -1.0 ma i cer collector cutoff current v ce = -80v; r be = 1.0k v ce = -80v; r be = 1.0k , t c =150 -1.0 -5.0 ma i ebo emitter cut-off current v eb = -5v; i c = 0 -2.0 ma h fe dc current gain i c = -5a ; v ce = -3v 1000 isc website www.iscsemi.cn 2
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